irf150.pdf datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF150DESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =0.055(Max)DS(on)High Power,High Speed ApplicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power suppliesUPSMotor controlsHigh energy pulse circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 100 VDSS GSV Gate-Source Voltage 20 VGSI Drain Current-continuous@ TC=25 40 ADP Total Dissipation@TC=25 150 WtotT Max. Operating Junction Temperature 150 jT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance,Junction to Case 0.83th j-c1i

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