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irf1503.pdf datasheet:

irf1503irf1503

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1503 IIRF1503FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=250A)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 75 ADI Drain Current-Single Pulsed 960 ADMP Total Dissipation @T =25 200 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.75Channel-to-ambi

 

Keywords - ALL TRANSISTORS DATASHEET

 irf1503.pdf Design, MOSFET, Power

 irf1503.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf1503.pdf Database, Innovation, IC, Electricity

 

 
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