Todos los transistores

 

irf1530n.pdf datasheet:

irf1530nirf1530n

PD -9.1353IRFI530NPRELIMINARYHEXFET Power MOSFET Advanced Process Technology Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.11 Fully Avalanche RatedID = 11ADescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design for which HEXFET Power MOSFETs arewell known, provides the designer with an extremelyefficient device for use in a wide variety of applications.The TO-220 Fullpak eliminates the need for additionalinsulating hardware in commercial-industrial applications.The moulding compound used provides a high isolationcapability and a low thermal resistance between the taband external heats

 

Keywords - ALL TRANSISTORS DATASHEET

 irf1530n.pdf Design, MOSFET, Power

 irf1530n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf1530n.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.