irf250p224.pdf datasheet:

isc N-Channel MOSFET Transistor IRF250P224IIRF250P224FEATURESStatic drain-source on-resistance:RDS(on)12mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 250 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 96 ADI Drain Current-Single Pulsed 384 ADMP Total Dissipation @T =25 313 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 0.48Channel-to-ambient thermal resistance/WRth(j-a) 401isc websitewww.iscsemi.cn isc & iscsemi is registered trade