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irf2807lpbf irf2807spbf.pdf datasheet:

irf2807lpbf_irf2807spbfirf2807lpbf_irf2807spbf

PD - 95945IRF2807SPbFIRF2807LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 75Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 13ml Fully Avalanche RatedGl Lead-FreeID = 82ADescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides the highestpower capability and the lowest possible on-resistance in anyexisting surface

 

Keywords - ALL TRANSISTORS DATASHEET

 irf2807lpbf irf2807spbf.pdf Design, MOSFET, Power

 irf2807lpbf irf2807spbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf2807lpbf irf2807spbf.pdf Database, Innovation, IC, Electricity

 

 
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