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irf2807pbf.pdf datasheet:

irf2807pbfirf2807pbf

PD - 94970AIRF2807PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 75Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 13ml Fast SwitchingGl Fully Avalanche Ratedl Lead-Free ID = 82ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 con

 

Keywords - ALL TRANSISTORS DATASHEET

 irf2807pbf.pdf Design, MOSFET, Power

 irf2807pbf.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf2807pbf.pdf Database, Innovation, IC, Electricity

 

 
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