irf2807z.pdf datasheet:

isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807ZFEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 75 ADI Drain Current-Single Pulsed 350 ADMP Total Dissipation @T =25 170 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.88/WRth(ch-a) Channel-to-ambient thermal res