irf2807zl.pdf datasheet:

Isc N-Channel MOSFET Transistor IRF2807ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gate-Source Voltage 20 VGSSDrain Current-ContinuousTc=2589I AD63Tc=100I Drain Current-Single Pulsed 350 ADMP Total Dissipation @T =25 170 WD CT Max. Operating Junction Temperature 175 chT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.91isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkIsc N-Channel MOSFET Transistor IRF280