irf2807zlpbf irf2807zpbf irf2807zspbf.pdf datasheet:

PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating. These featurescombine to make this design an extremely efficientand reliable device for use in a wide variety ofapplications.TO-220ABD2Pak TO-262IRF2807ZPbFIRF2807ZSPbF IRF2807ZLPbFAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C 89 AContinuous Drain Current