irf3205.pdf datasheet:

SEMICONDUCTORIRF3205TECHNICAL DATAN-Channel Power MOSFET (55V/120A) PurposeSuited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated productsFeatureLow RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25) Parameter Symbol Rating Unit 1.Gate 2.Drain 3.Source Drain-Source Voltage VDSS 55 V Drain Current ID(Tc=25) 110 A Drain Current ID(Tc=100) 80 A Pulsed Drain Current IDM 390 A Gate-Source Voltage VGSS 20 V Avalanche Current IAR 62 A Single Pulsed Avalanche Energy EAS 1050 mJ Repetitive Avalanche Energy EAR 20 mJ Total Power Dissipation PD(Tc=25) 200 W Junction and Storage Temperature Range TJ,TSTG -55 to 150 Electrical Characteristics(Ta=25)Parameter Symbol Test Conditions Min Typ Max Unit