irf3205s.pdf datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205SDESCRIPTIONDrain Current I =110A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 55 VDSS GSV Gate-Source Voltage 20 VGSI Drain Current-continuous@ T =25 110 AD CI Pulse Drain Current 390 ADMP Total Dissipation@T =25 200 Wtot CT Max. Operating Junction Temperature 175 jT Storage Temperature Range -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 0.75th j-c1isc websitewww.iscsemi.com isc & is