irf3205z.pdf datasheet:

PD - 94653AUTOMOTIVE MOSFETIRF3205ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 6.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest processing techniques to achieve extremelylow on-resistance per silicon area. Additional features of this design area 175C junction operating temperature, fast switching speed and im-proved repetitive avalanche rating . These features combine to make thisdesign an extremely efficient and reliable device for use in Automotiveapplications and a wide variety of other applications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, VGS @ 10V (Silicon Li