irf3305pbf.pdf datasheet:

PD - 95758AIRF3305PbFFeaturesHEXFET Power MOSFET Designed to support Linear Gate DriveApplications D 175C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and DesignRDS(on) = 8.0m Fully Avalanche RatedG Lead-FreeID = 75ASDescriptionThis HEXFET Power MOSFET utilizes a ruggedplanar process technology and device design,which greatly improves the Safe Operating Area(SOA) of the device. These features, coupledwith 175C junction operating temperature and"low thermal resistance of 0.45C/W"TO-220ABAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, VGS @ 10V (Silicon Limited)ID @ TC = 25C 140Continuous Drain Current, VGS @ 10V ID @ TC = 100C 99 AContinuous Drain Current, VGS @ 10V (Package Limited)ID @ TC = 25C 75Pulsed Drain Current IDM 560PD @TC