irf3410.pdf datasheet:

IRF3410www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol Limit UnitVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C40Continuous Drain Current (TJ = 175 C) IDTC = 125 C23AIDMPulsed Drain Current 120IARAvalanche Current 35L = 0.1 mH EAR61 mJRepetitive Avalanche EnergyaTC = 25 C107bPDMaximum Power Dissipationa WTA = 25 Cc 3.75TJ, TstgOperating Junction and Storage Temperature Range - 55 to 175 CTHERMAL RESISTANCE RATINGSParameter Symbol L