Todos los transistores

 

irf3415s.pdf datasheet:

irf3415sirf3415s

Isc N-Channel MOSFET Transistor IRF3415SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-Source Voltage 20 VGSSDrain Current-ContinuousTc=2543I AD30Tc=100I Drain Current-Single Pulsed 150 ADMP Total Dissipation @T =25 200 WD CT Max. Operating Junction Temperature 175 chStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.75/WRth(ch-a) Channel-to-ambient thermal resistance 401isc websitewww.iscsemi.cn isc & iscs

 

Keywords - ALL TRANSISTORS DATASHEET

 irf3415s.pdf Design, MOSFET, Power

 irf3415s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf3415s.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.