irf3710s irf3710l.pdf datasheet:

PD - 94201BIRF3710SIRF3710LHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 23ml Fast SwitchingGl Fully Avalanche RatedID = 57ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET power MOSFETs are well known for,provides the designer with an extremely efficient and reliable device for use ina wide variety of applications.The D2Pak is a surface mount power package capable of accommodating dieD2Pak TO-262sizes up to HEX-4. It provides the highest power capability and the lowestIRF3710S IRF3710Lpossible on-resistance in any existi