irf4905pbf.pdf datasheet:

IRF4905PBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVDSDrain-Source Voltage - 60VVGSGate-Source Voltage 20TC = 25 C- 53aTC = 70 C- 46.8Continuous Drain Current (TJ = 150 C) IDTA = 25 C-9.2bATA = 70 C- 8.1bIDMPulsed Drain Current - 200IASAvalanche Current Pulse - 45L = 0.1 mHEASSingle Pulse Avalanche Energy 101 mJTC = 25 C69aISContinuous Source-Drain Diode Current ATA = 25 C2.1bTC = 25 C104.2aTC = 70 C66.7aPDMaximum Power Dissipation