irf510a.pdf datasheet:

IRF510AAdvanced Power MOSFETFEATURESBVDSS = 100 Vn Avalanche Rugged TechnologyRDS(on) = 0.4 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = 5.6 An Improved Gate Chargen Extended Safe Operating AreaTO-220n 175C Operating Temperaturen Lower Leakage Current : 10 A (Max.) @ VDS = 100Vn Lower RDS(ON) : 0.289 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25)5.6IDAContinuous Drain Current (TC=100)4IDM Drain Current-Pulsed (1)20 AVGS Gate-to-Source Voltage20 VEAS Single Pulsed Avalanche Energy (2)63 mJIAR Avalanche Current (1)5.6 AEAR Repetitive Avalanche Energy (1)3.3 mJdv/dt Peak Diode Recovery dv/dt (2)6.5 V/nsTotal Power Dissipation (TC=25)33 WPDLinear Derating F