irf510pbf sihf510.pdf datasheet:

IRF510, SiHF510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.54RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 8.3 Fast SwitchingQgs (nC) 2.3 Ease of ParallelingQgd (nC) 3.8 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONTO-220ABThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. GThe TO-220AB package is universally preferred for allcommercial-industrial applications at power dissipationSDlevels to approximately 50 W. The low thermal resistanceGSand low package cost of the TO-220AB contribute to itsN-Channel MOSFET