irf5210spbf.pdf datasheet:

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRF5210SPBFFEATURESP-channelWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingUltra low on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -100 VDSSV Gate-Source Voltage 20 VGSSDrain Current-Continuous@T =25C -38I AD-24T =100CI Drain Current-Single Pulsed -140 ADMP Total Dissipation 170 WDT Operating Junction Temperature -55~150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.75/WRth(ch-a) Channel-to-ambient thermal resis