irf5305.pdf datasheet:

isc P-Channel MOSFET Transistor IRF5305,IIRF5305FEATURESStatic drain-source on-resistance:RDS(on)0.06Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -55 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous -31 ADI Drain Current-Single Pulsed -110 ADMP Total Dissipation @T =25 110 WD CMax. Operating Junction Temperature 175 TjStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(j-c) Channel-to-case thermal