irf530n.pdf datasheet:

isc N-Channel MOSFET Transistor IRF530NIIRF530NFEATURESStatic drain-source on-resistance:RDS(on) 0.09Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 17 ADI Drain Current-Single Pulsed 60 ADMP Total Dissipation @T =25 70 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 2.15Channel-to-ambient thermal resistance/WRth(ch-a) 621isc websitewww.iscs