irf530n 1.pdf datasheet:

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 17 AgRDS(ON) 110 msGENERAL DESCRIPTION PINNING SOT78 (TO220AB)N-channel enhancement mode PIN DESCRIPTIONtabfield-effect power transistor in adrainplastic envelope using trench 1 gatetechnology.2 drainApplications:- d.c. to d.c. converters 3 source switched mode power supplies 1 2 3gate sourcetab draindrainThe IRF530N is supplied in theSOT78 (TO220AB) conventionalleaded package.LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVDSS Drain-source voltage Tj = 25 C to 175C - 100 VVDGR Drain