irf530ns.pdf datasheet:

IRF530NSwww.VBsemi.twwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.100 at VGS = 10 V10020COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Symbol Limit UnitVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C20Continuous Drain Current (TJ = 175 C) IDTC = 125 C16AIDMPulsed Drain Current 70IASAvalanche Current 20L = 0.1 mHEAS200 mJSingle Pulse Avalanche EnergybTC = 25 C105PDWMaximum Power DissipationbTA = 25 Cd 3.75TJ, TstgOperating Junction and Storage Temperature Range - 55 to 175 C