irf540 sihf540.pdf datasheet:

IRF540, SiHF540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.077RoHS* 175 C Operating TemperatureQg (Max.) (nC) 72COMPLIANT Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONTO-220ABThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andGcost-effectiveness. The TO-220AB package is universally preferred for allScommercial-industrial applications at power dissipationDGS levels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220AB contribute to itsN-Channel MOSFET w