irf540a.pdf datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF540AFEATURESStatic drain-source on-resistance:RDS(on) 52m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous@ TC=25 28 ADI Drain Current-Single Plused 110 ADMP Total Dissipation @T =25 110 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance,Junction to Case 1.36th j-c1isc websitewww.iscsemi.com isc & iscsemi is