irf540zlpbf irf540zspbf.pdf datasheet:

PD - 95531AIRF540ZPbFIRF540ZSPbFIRF540ZLPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mG Lead-FreeID = 36ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating.These featurescombine to make this design an extremely efficientand reliable device for use in a wide variety ofTO-220AB D2Pak TO-262applications.IRF540ZPbF IRF540ZSPbF IRF540ZLPbFAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited)36I