irf540zpbf.pdf datasheet:

PD - 94758IRF540ZAUTOMOTIVE MOSFETIRF540ZSIRF540ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 100V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 26.5mGDescriptionID = 36ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistance per silicon area. Additional features ofthis design are a 175C junction operating tempera-ture, fast switching speed and improved repetitiveavalanche rating . These features combine to makethis design an extremely efficient and reliable devicefor use in Automotive applications and a wide varietyTO-220ABD2Pak TO-262of other applications.IRF540ZIRF540ZS IRF540ZLAbsolute Maximum RatingsPa