irf610a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 1.169 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200Continuous Drain Current (TC=25 o )C 3.3IDAContinuous Drain Current (TC=100 oC 2.1 )IDM Drain Current-Pulsed A1 10OVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJ44OIAR Avalanche Current 3.3 A1OEAR Repetitive Avalanche Energy 13.8 mJOdv/dt Peak Diode Recovery dv/dt 35.0 V/nsOTotal Power Dissipation (TC=25 o )C 38 WPDoLinear Derating Factor C0.31Operating Junction andTJ