irf610p.pdf datasheet:

IRF610Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) 200 TrenchFET Power MOSFETRDS(on) ()VGS = 10 V 0.85 175 C Junction TemperatureQg (Max.) (nC) 13 PWM Optimized 100 % Rg TestedQgs (nC) 3.0 Compliant to RoHS Directive 2002/95/ECQgd (nC) 7.9Configuration SingleAPPLICATIONS Primary Side SwitchTO-220AB DGG D SSN-Channel MOSFETTop View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOL LIMIT UNITDrain-Source Voltage VDS 200V Gate-Source Voltage VGS 20TC = 25 C 5.0Continuous Drain Current VGS at 10 V IDTC = 100 C 4.0 APulsed Drain Currenta IDM 20Linear Derating Factor 0.33W/C Linear Derating Factor (PCB Mount) e 0.020Single Pulse Avalanche Energy b EAS 161 mJ Repetitive Avalanche Current a IAR 4.8 A Repetitive Avalanche Energy