irf610pbf.pdf datasheet:

IRF610, SiHF610Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5RoHS* Fast SwitchingQg (Max.) (nC) 8.2COMPLIANT Ease of ParallelingQgs (nC) 1.8Qgd (nC) 4.5 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONTO-220ABThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andGcost-effectiveness. The TO-220AB package is universally preferred for allcommercial-industrial applications at power dissipationSDlevels to approximately 50 W. The low thermal resistanceG Sand low package cost of the TO-220AB contribute to itsN-Channel MOSFET wide acceptance throughout the indus