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irfb4110.pdf datasheet:

irfb4110irfb4110

isc N-Channel MOSFET Transistor IRFB4110IIRFB4110FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 180 ADI Drain Current-Single Pulsed 670 ADMP Total Dissipation @T =25 370 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.402Channel-to-ambient thermal resistance/WRth(ch-a) 621isc websiteww

 

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 irfb4110.pdf Design, MOSFET, Power

 irfb4110.pdf RoHS Compliant, Service, Triacs, Semiconductor

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