irfp15n60l.pdf datasheet:

isc N-Channel MOSFET Transistor IRFP15N60LDESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R =0.46(Max)DS(on)High Power,High Speed ApplicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power suppliesUPSMotor controlsHigh energy pulse circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 600 VDSS GSV Gate-Source Voltage 30 VGSI Drain Current-continuous@ TC=25 15 ADP Total Dissipation@TC=25 280 WtotT Max. Operating Junction Temperature 150 jT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance,Junction to Case 0.83th j-c1isc websitewww.iscs