irfp250a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V200oContinuous Drain Current (TC=25 C)32IDAoCContinuous Drain Current (TC=100 )20.31IDM Drain Current-Pulsed AO 130VGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJO 6831IAR Avalanche Current O 32 AEAR Repetitive Avalanche Energy 120.4 mJOdv/dt Peak Diode Recovery dv/dt 35.0 V/ns OTotal Power Dissipation (TC=25 oC)204 WPDoLinear Derating Factor C1.63Operating Junction and