irfp250n.pdf datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP250NIIRFP250NFEATURESStatic drain-source on-resistance:RDS(on)75mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 30 ADI Drain Current-Single Pulsed 120 ADMP Total Dissipation @T =25 214 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 0.7Channel-to-ambient thermal resistance/WRth(j-a) 401isc websitewww.iscsemi.cn isc & iscsemi is registered tradema