irfp254a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.108 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V250Continuous Drain Current (TC=25 o )C 25IDAoCContinuous Drain Current (TC=100 )15.9IDM Drain Current-Pulsed A1 100OVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJ781OIAR Avalanche Current 25 A1OEAR Repetitive Avalanche Energy 122.1 mJOdv/dt Peak Diode Recovery dv/dt 34.8 V/nsOTotal Power Dissipation (TC=25 oC)221 WPDLinear Derating Factor W/ o 1.79 COperating Junction an