irfp260mpbf.pdf datasheet:

PD - 96293IRFP260MPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a wide variety of applications.The TO-247 package is preferred for commercial-industrial applications wherehigher power levels preclude the use of TO-220 devices. The TO-247 is similarbut superior to the earlier TO-218 pa