irfp260npbf.pdf datasheet:

PD - 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fastswitching speed and ruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a wide variety ofapplications.The TO-247 package is preferred for commercial-industrialTO-247ACapplications where higher power levels preclude the use of TO-220devices. The TO-247 is similar but superior to the ear