irfp3306pbf.pdf datasheet:

PD - 97128IRFP3306PbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.3m:l Uninterruptible Power Supplyl High Speed Power Switchingmax. 4.2m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)160A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDl Fully Characterized Capacitance and AvalancheSOAl Enhanced body diode dV/dt and dI/dt CapabilitySDl Lead-FreeGTO-247ACGDSGate Drain SourceAbsolute Maximum RatingsSymbol Parameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 160cID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 110AID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120IDM Pulsed Drain Current d 620PD @TC