irfp350a.pdf datasheet:

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V400Continuous Drain Current (TC=25 )17IDAContinuous Drain Current (TC=100 )10.81IDM Drain Current-Pulsed O 68 AVGS Gate-to-Source Voltage _ V2EAS Single Pulsed Avalanche Energy O 1156 mJ1IAR Avalanche Current 17 AOEAR Repetitive Avalanche Energy 1O 20.2 mJ3dv/dt Peak Diode Recovery dv/dt O 4.0 V/nsTotal Power Dissipation (TC=25 )202 WPDLinear Derating Factor W/ 1.61 Operating Junction