irfp350lc.pdf datasheet:

PD - 9.1229IRFP350LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 400VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.30Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional MOSFETs. Utilizing advanced Hexfettechnology the device improvements allow for reduced gate drive requirements,faster switching speeds and increased total system savings. These deviceimprovements combined with the proven ruggedness and reliability of HEXFETsoffer the designer a new standard in power transistors for switching applications.The TO-247 package is preferred for commercial-industrial applications wherehigher power levels preclude the use of TO-220 devices. The TO-247 is s