irfp353r.pdf datasheet:

INCHANGE Semiconductor isc Product Specificationisc N-Channel MOSFET Transistor IRFP353(R)FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast SwitchingDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 350 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 13 ADI Drain Current-Single Pluse 52 ADMP Total Dissipation @T =25 150 WD CMax. Operating Junction Temperature -55~150 TJT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 0.83th j-c/WR Thermal Resistance, Junction to Ambient 80