irfp360lc.pdf datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP360LCFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 400 VDSSV Gate-Source Voltage 30 VGSSDrain Current-Continuous@T =25C 23I AD14T =100CI Drain Current-Single Pulsed 92 ADMP Total Dissipation 280 WDT Operating Junction Temperature -55~150 jStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.45/WRth(ch-a) Channel-to-ambient thermal resistance 401isc websitewww.iscsemi.cn isc & iscsem