irfp3703.pdf datasheet:

isc N-Channel MOSFET Transistor IRFP3703IIRFP3703FEATURESStatic drain-source on-resistance:RDS(on)2.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 210 ADI Drain Current-Single Pulsed 1000 ADMP Total Dissipation @T =25 230 WD CT Max. Operating Junction Temperature 150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 0.65Channel-to-ambient thermal resistance/WRth(j-a) 401isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-

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