irfp3710.pdf datasheet:

PD-91490CIRFP3710HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.025W Fully Avalanche RatedGID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of applications.The TO-247 package is preferred for commercial-industrial applications where higher power levelspreclude the use of TO-220 devices. The TO-247 issimilar but superior to the earlier TO-218 packageTO-247ACbecause of its isolated mounting hole.Absolute Maxi