irfp4321.pdf datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4321IIRFP4321FEATURESStatic drain-source on-resistance:RDS(on)15.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONMotion Control ApplicationsHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHard Switched And High Frequency CircuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 78 ADI Drain Current-Single Pulsed 330 ADMP Total Dissipation @T =25 310 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance