irfr120n.pdf datasheet:

isc N-Channel MOSFET Transistor IRFR120N, IIRFR120NFEATURESStatic drain-source on-resistance:RDS(on)210mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 9.4 ADI Drain Current-Single Pulsed 38 ADMP Total Dissipation @T =25 48 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 3.1Channel-to-ambient thermal resistance/WRth(j-a) 1101isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel MOSFET