irfr120n.pdf datasheet:

PD - 91365BIRFR/U120NHEXFET Power MOSFET Surface Mount (IRFR120N)D Straight Lead (IRFU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.21 Fully Avalanche RatedGDescriptionID = 9.4ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient device for use in a widevariety of applications.The D-PAK is designed for surface mounting usingvapor phase, infrared, or wave soldering techniques. D -P AK I-PA KThe straight lead version (IRFU series) is for through-T O-252AA TO-251AAhole mounting applications. Power dissipation levelsup to 1.5 watts