irfr120z.pdf datasheet:

isc N-Channel MOSFET Transistor IRFR120Z, IIRFR120ZFEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 8.7 ADI Drain Current-Single Pulsed 35 ADMP Total Dissipation @T =25 35 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 4.28Channel-to-ambient thermal resistance/WRth(j-a) 1101isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel MOSFE