irfr120zpbf irfu120zpbf.pdf datasheet:

PD - 95772BIRFR120ZPbFIRFU120ZPbFHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 190m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 8.7ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistance per silicon area. Additional features ofthis design are a 175C junction operating temperature,fast switching speed and improved repetitiveavalanche rating . These features combine to makeD-Pak I-Pakthis design an extremely efficient and reliable deviceIRFR120ZPbF IRFU120ZPbFfor use in a wide variety of applications.Absolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited)8.7ID @ TC = 100C Continuous Dra